Improvement of current leakage in the InAs photodetector by molecular beam epitaxy
Journal
Journal of Crystal Growth
Journal Volume
227-228
Pages
167-171
Date Issued
2001
Author(s)
Abstract
I-V characteristics of the unpassivated InAs p-i-n diodes with various i-layer thickness have been systematically studied. At the same reverse bias of -0.5 V, the reverse current density is -0.83 and -0.18 A/cm2 for the p-n diodes and p-i-n diodes with a 0.72-μm-thick i-layer, respectively. It is obvious that the surface shunt and bulk leakage current are dramatically decreased owing to increasing of the i-layer thickness between p and n layers of InAs p-n junction. Meanwhile, an odd current-temperature behavior; the reverse-bias current decreases with increasing temperature, has been observed in the InAs p-i-n photodetector with a 0.72-μm-thick i-layer. Below 90 K, the photocurrent generated by the background thermal radiation should dominate the I-V characteristics of the p-i-n diode and the photocurrent increases a little as temperature drops due to the improvement of minority carrier diffusion length. © 2001 Elsevier Science B.V.
SDGs
Type
conference paper