Strain fields and transition energies in multilayer InAs/GaAs quantum dots
Journal
ASME International Mechanical Engineering Congress and Exposition, Proceedings
Journal Volume
6
Pages
75-78
Date Issued
2009
Author(s)
Abstract
Strain fields and transition energies of vertically stacked semiconductor quantum dots are investigated. Strain fields, induced by lattice mismatches in heterostructures, in and around quantum dots are analyzed on the basis of the linear elasticity. The three-dimensional steady-state strained-effective-mass Schro?dinger equation is then modified by incorporating the effects of strain fields into the carrier confinement potential and is analyzed by finite element methods numerically. The results include the energy levels and wavefunction spectra of InAs/GaAs quantum dots. The calculated optoelectronic transition energies agree well with the previous experimental photoluminescence data. Numerical results also suggest that transition energy decreases as the spacer thickness increases.
SDGs
Type
conference paper