Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors
Resource
Applied Physics Letters 91 (18): 181912
Journal
Applied Physics Letters
Journal Volume
91
Journal Issue
18
Pages
181912-1- 181912-3
Date Issued
2007
Date
2007
Author(s)
Hsiao, Ching-Lien
Hsu, Hsu-Cheng
Wu Chien-Ting
Chen, Min
Tu, Li-Wei
Chen, Kuei-Hsien
Abstract
Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679 eV with a very narrow linewidth of 17 meV at excitation power density of 3.4 W cm2. Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by ∼45 meV from 300 to 15 K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3× 1017 cm-3 has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2× 1017 cm-3. © 2007 American Institute of Physics.
SDGs
Other Subjects
Carrier concentration; Linewidth; Molecular beam epitaxy; Photoluminescence spectroscopy; Semiconducting indium compounds; Silicon; Transmission electron microscopy; Excitation power density; Mott transition; Varshni equation; Wurtzite structure; Microcrystals
Publisher
American Institute of Physics
Type
journal article
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