Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells
Resource
Applied Physics Letters 80 (14): 2571-2573
Journal
Applied Physics Letters
Journal Volume
80
Journal Issue
14
Pages
2571-2573
Date Issued
2002
Author(s)
Abstract
Postgrowth thermal annealing of an InGaN/GaN quantum-well sample with a medium level of nominal indium content (19%) was conducted. From the analyses of high-resolution transmission electron microscopy and energy filter transmission electron microscopy, it was found that thermal annealing at 900 �XC led to a quasiregular quantum-dot-like structure. However, such a structure was destroyed when the annealing temperature was raised to 950 �XC. Temperature-dependent photoluminescence (PL) measurements showed quite consistent results. Blueshift of the PL peak position and narrowing of the PL spectral width after thermal annealing were observed.
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journal article
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