Enhancement in the efficiency of light emission from silicon by a thin Al2O3 surface-passivating layer grown by atomic layer deposition at low temperature

Resource

Journal of Applied Physics 101 (3): 033130

Journal

Journal of Applied Physics

Journal Volume

101

Journal Issue

3

Pages

-

Date Issued

2007

Date

2007

Author(s)

Chen, M. J.

Shih, Y. T.

Wu, M. K.

Tsai, F. Y.

URI

Type

journal article

File(s)

Name

04.pdf

Size

87.14 KB

Format

Adobe PDF

Checksum

(MD5):5955386abb254020386bb6780bf59fde