Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling
Journal
Opto-electronics Review
Journal Volume
27
Journal Issue
3
Pages
275-281
Date Issued
2019
Author(s)
Abstract
The paper reports on the barrier mid-wave infrared InAs/InAsSb (x Sb = 0.4) type-II superlattice detector operating below thermoelectrical cooling.AlAsSb with Sb composition, x Sb = 0.97; barrier doping, N D < 2×10 16 cm -3 leading to valence band offset below 100 meV in relation to the active layer doping, N D = 5×10 15 cm -3 was proved to be proper material not introducing extra barrier in valence band in the analyzed temperature range in XBn architectures.The detectivity of the simulated structure was assessed at the level of ∼ 10 11 Jones at T ∼ 100 K assuming absorber thickness, d = 3 m.The detector's architecture for high frequency response operation, s = 420 ps (T ∼ 77 K) was presented with a reduced active layer of d = 1 m.
Type
journal article