Enhancement of tunneling magnetoresistance through a magnetic barrier
Journal
Journal of Magnetism and Magnetic Materials
Journal Volume
209
Journal Issue
1月3日
Pages
61-64
Date Issued
2000
Author(s)
Chen, S. P.
Abstract
The magnetoresistance of a spin-filter junction was studied. It is predicted that a large tunneling magnetoresistance (TMR) can be obtained. A large polarization of the tunneling current is produced from a spin-dependent barrier. Magnetic barrier in junctions acted as a spin filter, and the TMR ratio was of almost the same magnitude for either a ferromagnetic or nonmagnetic metal at the left electrode. This indicates that only the right ferromagnetic electrode is essential in the spin-filter junction. However, the larger the spin polarization of the right electrode, the more sensitive is the TMR ratio on the barrier height of the magnetic insulator.
Type
journal article