A Study on TeO2 Nanostructure RRAM Device
Date Issued
2012
Date
2012
Author(s)
Kang, Hung-Sen
Abstract
In this thesis, a resistive random-access memory was fabricated by using the tellurium dioxide. The nanostructure of the tellurium dioxide was grown on the p-type silicon substrate in a high-temperature furnace. Scanning electron microscopy, Photoluminescence and X-ray diffraction analysis were carried out to investigate the morphology and the crystalline structure of the grown tellurium dioxide, respectively.
Two types of resistive random-access memory devices were fabricated by employing different materials, silver and aluminum, as the conducting layer. In this study, aluminum was coated as the electrodes by the thermal evaporation method. The resistive random-access memory device was constructed by sandwiching the tellurium layer between the p-type silicon substrate and the conducting layer.
The measured current-voltage characteristics of the device with the aluminum conducting layer performed better than that with the silver one. To improve the device performance, annealing and extending the growth time of TeO2 nanostructure were attempted in this study, and the results show a positive outcome.
Resistive random-access memory is a relatively new subject for solid state devices. Only a handful of experimental data are available to date. The results presented in this thesis indicate that the stability and persistence of the resistive random-access memory devices will be the fundamental challenges for its future development.
Subjects
non-volatile memory
resistive random-access memory
tellurium dioxide
Type
thesis
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