Turn-off transient analysis of PD SOI NMOS device
Date Issued
2008
Date
2008
Author(s)
Lin, Kai-Wei
Abstract
This thesis discuses the mechanism of the nanometer PD-SOI NMOS device while turning off. Chapter 1 gives a brief introduction about SOI technology and the scaling trends. We can see the advantage of using SOI devices comparing to Bulk device.hapter 2, as verified by Medici, the 2D simulation software. It shows the difference between drain current voltage, base-emitter voltage, and Qn while turning off . With a smaller S/D length due to the weaker function of the parasitic bipolar device, drain current voltage is smaller. We also consider difference in lifetime and ii model for advance discussion.hapter 3 is conclusion and discussion of this research.
Subjects
Turn off
PD SOI
STI
BGN
Type
thesis
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ntu-97-R95943045-1.pdf
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