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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Fabrication and simulation of high-power high-speed Ga0.51In0.49P/GaAs airbridge gate MISFET's grown by GSMBE
Details
Fabrication and simulation of high-power high-speed Ga0.51In0.49P/GaAs airbridge gate MISFET's grown by GSMBE
Journal
GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Pages
233-236
Date Issued
1996
Author(s)
Lin, Yo-Sheng
Wang, Yo-Jen
Lu, Shey-Shi
Meng, Charles Chin-Chun
DOI
10.1109/GAAS.1996.567876
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030407009&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/324118
http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910031946/1/00567876.pdf
SDGs
[SDGs]SDG7
Type
conference paper
File(s)
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Name
00567876.pdf
Size
581.05 KB
Format
Adobe PDF
Checksum
(MD5):6013f4d9dfe4958ff2b9dbf592ff8641
