Crystal Growth and Green Light Phenomenon of (Y1-XYbX) 3Al5O12
Date Issued
2005
Date
2005
Author(s)
Hsia, Tsun-Yao
DOI
zh-TW
Abstract
Due to recent development of InGaAs diode laser, Yb3＋ doped solid state materials to be used as gain for high-power and high-efficiency diode-pumped solid-state lasers have attracted a great deal of interest. The Yb3＋ ion has the simplest energy level：only two multiplet manifolds－the 2F7/2 ground state and the 2F5/2 excited state. Among rare-earth ions, only Yb3＋ion has excited state within approximately 10,000 cm－1. Because of this, deleterious effects such as excited absorption and up-conversion are absent in Yb3＋ lasers.
Besides, Yb：YAG crystals have many other attractive characteristics such as high thermal conductivity, excellent physical and chemical properties of the host materials. Moreover, because yttrium and ytterbium garnet are isostructural with only about 1.5﹪difference in unit-cell size, doping concentration of Yb3＋ can be very high in YAG crystal grown by Czochralski（Cz）method. Yb：YAG crystal has become an important component in diode-pumped high-power laser systems.
Yb：YAG crystals were successfully grown using the Czochralski technique with Yb concentration,【Yb】, varying from 0 to 100 at.﹪. During the study of the spectral performance on the crystals, a shining green emission light（centered at around 550nm）generated from the crystal was observed after being excited by the 920 or 973 nm InGaAs LD source. This greenish light emission is a new phenomenon which is not been reported before in Yb：YAG crystals. The result was ascribed to the presence of the Yb3＋ dopant and the effect of two-photon transition.
Subjects
晶體生長
摻鐿釔鋁石榴石
綠光 .
Crystal Growth
(Y1-XYbX) 3Al5O12
Green Light .
Type
thesis