4-QAM OFDM Data Switching via Free Carrier Absorption in Si-Rich SiC Waveguide
Journal
IEEE Journal of Selected Topics in Quantum Electronics
Journal Volume
27
Journal Issue
3
Date Issued
2021
Author(s)
Abstract
The all-optical cross-wavelength quadrature amplitude modulation orthogonal frequency-division multiplexing (QAM-OFDM) data switching in the silicon rich silicon carbide (Si-rich SiC) micro-ring (μ-ring) waveguide is demonstrated for the first time by using the two-photon absorption (TPA) induced free carrier absorption (FCA) process. With enlarging the allowable 4-QAM OFDM data bandwidth to 1.16 GHz, the all-optical 4-QAM OFDM pump-to-probe switching with allowable bandwidth of 1.16 GHz can achieve a raw data rate up to 2.32 Gbit/s with forward error correction (FEC) qualified error vector magnitude (EVM), signal-to-noise ratio (SNR), and bit-err-ratio (BER) of 31.9%, 9.92 dB, and 8.7 × 10-4, respectively. With upgrading the bandwidth of electrical pre-amplifier to 1.5 GHz, the wavelength-converted probe data can successfully pass the FEC criterion with qualified SNR of 9.49 dB, BER of 1.4 × 10-3 and EVM of 33.5%, to demonstrate the all-optical switching data rate approaching 3 Gbit/s. ? 1995-2012 IEEE.
Subjects
4-QAM OFDM
all-optical modulation
free carrier absorption
SiC material
Bandwidth
Bit error rate
Error correction
Forward error correction
Luminescence of organic solids
Optical fiber communication
Optical switches
Orthogonal frequency division multiplexing
Quadrature phase shift keying
Silicon carbide
Switching
Two photon processes
Waveguides
All optical
All-optical switching
Data bandwidth
Error vector magnitude
Free carrier absorption
Microrings
Silicon rich
Two photon absorption
Signal to noise ratio
Type
journal article