174-nm mode spacing in dual-wavelength semiconductor laser using nonidentical InGaAsP quantum wells
Resource
IEEE Photonics Technology Letters 16 (2): 371-373
Journal
IEEE Photonics Technology Letters
Journal Volume
16
Journal Issue
2
Pages
371-373
Date Issued
2004
Date
2004
Author(s)
Abstract
A very wide tuning range of dual-wavelength semiconductor lasers with properly designed nonidentical InGaAsP quantum wells is reported. As the external cavity of reflected-type grating telescope configuration is well aligned, the dual-wavelength operation can be achieved with a record wavelength separation as large as 174 nm (25 THz). The wide separation of two wavelengths is possible due to a proper modification of the external-cavity configuration and reduced gain competition of laser modes.
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Type
journal article
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