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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Dc characterization of the Ga0.51In0.49P/GaAs tunneling emitter bipolar transistor
Details
Dc characterization of the Ga0.51In0.49P/GaAs tunneling emitter bipolar transistor
Journal
Applied Physics Letters
Journal Volume
60
Journal Issue
17
Pages
2138-2140
Date Issued
1992
Author(s)
SHEY-SHI LU
CHUNG-CHIH WU
Huang, C.C.
Williamson, F.
Nathan M.I.
DOI
10.1063/1.107062
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/498120
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000716494&doi=10.1063%2f1.107062&partnerID=40&md5=0c463a06d343b6dbcf08219bfa4d6708
Type
journal article