以四乙基正矽酸鹽沉積二氧化矽薄膜之研究
Date Issued
2004
Date
2004
Author(s)
李昱宏
DOI
zh-TW
Abstract
The objective of this study is to focus on the uniformity of silica deposited on the surface of wafer 12” for RTCVD reactor design by CFD-RC-based computer simulations. The effect of operational parameters on the uniformity of deposition are studied in detailed. The operational parameters include the temperature of lamps, the temperature of compensatory lamps, the geometry of reactor and the Reynolds number of inlet. The geometry of reactor contains four sub-parameters which include (1)the size of inlet, (2)the size of outlet, (3)the inclined angle of sidewall and (4)the distance between inlet and wafer.
The results show that the temperature of lamps may speed up the deposition rate, but decrease the degree of deposition uniformity. The deposition uniformity can be achieved effectively by controlling the compensatory lamps within a limited range of temperature. As regards the geometry, the size of inlet/outlet and the distance between inlet and wafer have great influence on the degree of uniformity of wafer. The main function of the inclined angle on the sidewall is to avoid the recirculation which can decrease the uniformity of wafer. In this study, the inclined angle can’t restrain the recirculation effectively.
Subjects
晶圓
均勻性
二氧化矽
化學氣相沈積
TEOS
SiO2
deposition
wafer
RTCVD
uniformity
CVD
Type
thesis
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