600 meV Effective Work Function Tuning by Sputtered WNxFilms
Journal
2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Pages
106-107
Date Issued
2020
Author(s)
Abstract
Tungsten-based material is a promising candidate for work function metal. Tungsten with high electrical conductivity and midgap work function [1] has been used to fill the gate and contact plugs in the industry. In this work, the effective work function (EWF) of sputtered WN x is tuned by varying the annealing temperature and the nitrogen content in the WN x films. The EWF of sputtered WN x has 600 meV range around Si midgap. Furthermore, the tungsten-based gate metal WN x C y by plasma-enhanced atomic layer deposition (PEALD) is successfully integrated in stacked gate-all-around (GAA) transistors to modulate the Vt with no performance degradation.
Type
conference paper