A 32-GHz non-uniform distributed amplifier in 0.18-μm CMOS
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
15
Journal Issue
11
Pages
745-747
Date Issued
2005
Author(s)
Abstract
This letter presents a fully integrated distributed amplifier in a standard 0.18-�gm CMOS technology. By employing a nonuniform architecture for the synthetic transmission lines, the proposed distributed amplifier exhibits enhanced performance in terms of gain and bandwidth. Drawing a dc current of 45mA from a 2.2-V supply voltage, the fabricated circuit exhibits 9.5-dB pass-band gain with a bandwidth of 32GHz while maintaining good input and output return losses over the entire frequency band. With a compact layout technique, the chip size of the distributed amplifier including the testing pads is 940��860�gm 2 .
SDGs
Type
journal article