Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150°C

Journal

Applied Physics Letters

Journal Volume

80

Journal Issue

3

Pages

440-442

Date Issued

2002

Author(s)

Cheng, I.-C.

Wagner, S.

DOI

10.1063/1.1435798

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-79956054766&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/298246

Type

journal article