Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition

Resource

book III-Nitride Devices and NanoEngineering, 3, 57-88

Journal

book III-Nitride Devices and NanoEngineering

Journal Issue

3

Pages

57-88

Date Issued

2008

Date

2008

Author(s)

Feng, Zhe Chuan

Li, Alan Gang

Ferguson, Ian T.

URI

Type

book

File(s)

Name

index.html

Size

24.38 KB

Format

HTML

Checksum

(MD5):28ad9c69b18d0ad8c166ae6ab7c12c7a