Counter-doped JTE, an edge termination for HV SiC devices with increased tolerance to the surface charge

Journal

IEEE Transactions on Electron Devices

Journal Volume

62

Journal Issue

2

Pages

354-358

Date Issued

2015

Author(s)

Huang, C.-F.

Hsu, H.-C.

Chu, K.-W.

Lee, L.-H.

Tsai, M.-J.

Lee, K.-Y.

Zhao, F.

DOI

10.1109/TED.2014.2361535

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-84921787893&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/390266

Type

journal article