The Fabrication and Analysis of High-Power AlGaN/GaN High Electron Mobility Transistor
Date Issued
2014
Date
2014
Author(s)
Yeh, Jung-Po
Abstract
GaN is a stable semiconductor material with wide bandgap of 3.4eV which can apply to high-voltage devices, and because of its direct-bandgap property, we commonly used in bright LED of short wavelength with 405nm. In addition,AlGaN/GaN hetero-junction has outstanding carrier transport property and high electron mobility because of the existence of two-dimensional electron gas with high concentration, and we can apply to high-power and high-frequency circuit operation.
Currently, GaN is one of the most attractive semiconductor materials.
Enhancement mode AlGaN/GaN MOSFETs fabricated by gate recessed technique and MIS structure is mentioned in this study. Reactive ion etching using a high-density systems (HDP-RIE) dry etch the gate recessed area with BCl3/Cl2/Ar gas can effective improve the etching selectivity ratio and reduce surface roughness. Hope to reduce the element of damage. Furthermore, the gate dielectric material grew by ALD (Atomic Layer Deposited) with high k such as aluminum oxide, hafnium oxide can reduce the gate leakage and enhance the current density.
In this thesis,we research gate-last fabrication process and discuss metal-gate/high-κ dielectric stacks in the annealing process feasibility,We analyze the results, and hope that the process can be used to GaN fabrication in the future.
Subjects
閘極氧化層
氮化鋁鎵/氮化鎵
原子沉積系統
二維電子氣
Type
thesis
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