Applications of positron annihilation, photoluminescence, and Raman spectroscopies to analyze the defect near the Si0.5Ge0.5/Si interface with super quality by diluted HF treatment
Journal
第十六屆非破壞檢測技術研討會暨年會論文競賽
Date Issued
2012
Author(s)
Description
Taipei
Type
conference paper