High-Yield W-Band Monolithic HEMT Low-Noise Amplifier and Image Rejection Downconverter Chips
Journal
IEEE Microwave and Guided Wave Letters
Journal Volume
3
Journal Issue
8
Pages
281-283
Date Issued
1993
Author(s)
Wang, H.
Chang, K.W.
Ton, T.N.
Biedenbender, M.
Chen, S.T.
Lee, J.
Dow, G.S.
Tan, K.L.
Allen, B.R.
Abstract
High-yield W-band monolithic integrated circuits (a three-stage low-noise amplifier (LNA), and a monolithic image rejection downconverter (IRD) using the LNA as the front end followed by an image rejection mixer (IRM)) are discussed. These MMIC’s were fabricated in the 0.1-μ/m AlGaAs-InGaAs-GaAs HEMT production line at TRW. The LNA demonstrated a typical 17-dB gain and 4.5-5.5-dB noise figure at 94 GHz. The complete monolithic IRD has a measured conversion gain of 7–9 dB with a single side-band (SSB) noise figure of 6 dB when downconverting 93-95-GHz RF signal to 50–500 MHz. The downconvertion requires an LO power of 9 dBm. The development of these MMIC’s shows the increasing maturity of GaAs based HEMT MMIC technology at W-band. © 1993 IEEE
SDGs
Type
journal article