Characteristics of Metal-Nitride-Semiconductor Light Emitting Diode Made on PECVD Grown Si-rich SiNx Film with Si Nanocrystals
Date Issued
2008
Date
2008
Author(s)
Lin, Cheng-Tao
Abstract
In this thesis, we study optoelectrical characteristics and material analysis of silicon-rich silicon nitride film (SRSN) with silicon nanocrystals (Si-ncs). The SRSN films are deposited by plasma enhanced chemical vapor deposition (PECVD) using SiH4 and N2 or NH3. Si-ncs embedded in Si3N4 would form after high temperature annealing. We conclude that NH3 is the better reactant gas instead of N2. The SRSN films with different composition are deposited by detuning NH3 fluence. From results by means of RBS, we gain the ratio of N/Si raise with NH3 increasing, and SRSN changes from Si-rich SiNx to pure Si3N4. This phenomenon is proved by means of FTIR, the absorption peak corresponds Si-H stretching mode shift toward long wavenumber. From images of HRTEM, we observe that the size of Si-ncs decrease with NH3 increasing. The photoluminescence (PL) ranges from 675 nm to 385 nm by quantum confinement effect (QCE). The strongest PL reveals from SiN1.16. In addition, we discuss the electroluminescence of SRSN LED. The low turn-on voltage is 3 V because of low barrier between metal and dielectric layer. However, the optical power just reaches 45 nW. As the result, we study the charge storage effect in SRSN LED. In capacitance-voltage and retention time measurement, we conclude electron and hole are hardly trapped in Si-ncs so that the efficiency of e-h recombination is low, compared to Si-rich silicon oxide (SRSO) LED.
Subjects
Si-ncs
silicon rich silicon nitride
tunable wavelength
turn-on voltage
charge storage effect
retention time
Type
thesis
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