Room temperature unpassivated inas P-I-N photodetectors grown by molecular beam epitaxy
Journal
IEEE Transactions on Electron Devices
Journal Volume
44
Journal Issue
2
Pages
209-213
Date Issued
1997
Author(s)
Abstract
An unpassivated InAs p-i-n photodetector with excellent performance at room temperature was demonstrated. The zero-bias resistance area products of the diode with 720-nm thick i-layer are 8.1 ω-cm2 at room temperature and as high as 1.3 M ω-cm2 at 77 K. At 77 K, the diode exhibits a breakdown voltage exceeding 13 V. When tested under a 500 K blackbody source, the measured detectivity limited by Johnson noise is 1.2 × 1010 cm-Hz1/2/W at room temperature and 8.1 × 1011 cm-Hz1/2/W at 77 K. To our knowledge, this is the best data for a room temperature infrared detector. © 1997 IEEE.
SDGs
Other Subjects
Energy gap; Fermi level; Molecular beam epitaxy; Performance; Reflection high energy electron diffraction; Semiconducting indium compounds; Bandgap; Detectivity; Johnson noise; Leakage current; Room temperature; Photodiodes
Type
journal article