Application of overheated carbon source for the synthesis of carbon nanotube
Date Issued
2006
Date
2006
Author(s)
Yao-Chung,Chang
DOI
zh-TW
Abstract
In this paper, we research overheated carbon source application for carbon nanotube growth. The application of carbon nanotube was broadly involved because of its remarkable mechanic properties. Carbon nanotube might be integrated with micro-scale structure of conventional MEMS fabrication, expected to obtain new types of nano-scale device. Carbon nanotube is provided with high worth of science academic research, and is attracting lots of savant’s great research interest. Hence, carbon nanotube is generally acknowledged as the most potential material for the future high technology industry.
Experiment method of carbon nanotube growth would be chemical vapor deposition (CVD) on catalytically patterned substrate surfaces, equipment would be 3-stage furnace in different temperature parameter. Generally speaking, the catalyst source for carbon nanotube growth could be evaporated metallic or nonmetallic thin film on the substrate by means of E-beam evaporator. Iron、cobalt、nickel are the metal thin film catalyst in common use. Another method in common use would be dropped ferritin reagent as catalyst on the substrate, and move in the furnace for nanotube growth. Utilizing metal thin film for carbon nanotube growth would be multi-walled in majority. The thinner metal thin film is, the more chance to obtain single-walled carbon nanotube. Ferritin catalyst particle scale is only several nanometers, which is advantageous for single-walled carbon nanotube growth. Carbon nanotubes would be single-walled as long as the reaction gas parameter was controlled appropriately. Consequently, ferritin particle would be the catalyst source in this paper.
We will emphasize the control of the reaction gas parameter in the experiment, and expect to grow single-walled carbon nanotube in lower temperature. We synthesize catalyst in different concentration, not only to compare with the numbers of carbon nanotube per unit area in different temperature, but also to observe the grow phenomenon. Temperature setup was 950℃、850℃、750℃ in order, and we obtain single-walled carbon nanotube in 750℃ successfully in the appropriate control of the reaction gas flow rate. Finally, we obtain single-walled carbon nanotube in lower temperature 700℃. We hope the research would provide worthy reference and be helpful for the following academician.
Subjects
奈米碳管
化學氣相沉積法
carbon nanotube
CVD
Type
thesis
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