Series and Parallel Measurement of Resistive Random Access Memory with Floating Terminal Effect and 1/f Noise Analysis of Poly-Silicon Thin Film Transistor and α-IGZO Thin Film Transistor
Date Issued
2011
Date
2011
Author(s)
Li, Hsuan-Chih
Abstract
In this thesis, the first part is the model and physical mechanism of Resistive random access memory (RRAM). RRAM is one of the many types nonvolatile memory, which is the most promising candidate to replace traditional flash memory. External voltage is added on RRAM to switch the device between low resistance state (LRS) and high resistance state (HRS), and recorded to Logic 0 or 1. RRAM has advantages of low power consumption and low operation voltage (write voltage <3V, read voltage ~0.1V), a simple structure (a transition metal oxide layer between top and bottom layer electrode), multilevel operation (can dramatically increase memory density), very fast read and write speed (<10ns), high durability (>10yrs). Our device is prepared by Industrial Technology Research Institute (ITRI), some measurements are done in ITRI, and others and done in NTU. We have did different experiment test on RRAM, such as different current compliance, maximum negative voltage Vstop, and analysis of series operation of two RRAM cell. We discover for series SET test, there will be so-called floating terminal effect; we will propose a model for thi phenomenon, and a way to prevent this.
The second part is the physical analysis on Thin-Film Transistor (TFT). The device is prepared by AU Optronics Corp.(AUO), and measured at National Nano Device Laboratories (NDL). We will first start from the analysis of physics of McWhorter Model compare with other two models in the literature. Next, we will further discuss and explain the physical mechanism from the measurement results.
The third part is the low frequency analysis of α-IGZO, where the device is prepared by Chimei Innolux Corporation (CMO), and measured at National Nano Device Laboratories (NDL). Since there are little research on this topic, we hope with the analysis of low frequency noise, we can learn more about the physical mechanism of α-IGZO.
The second part is the physical analysis on Thin-Film Transistor (TFT). The device is prepared by AU Optronics Corp.(AUO), and measured at National Nano Device Laboratories (NDL). We will first start from the analysis of physics of McWhorter Model compare with other two models in the literature. Next, we will further discuss and explain the physical mechanism from the measurement results.
The third part is the low frequency analysis of α-IGZO, where the device is prepared by Chimei Innolux Corporation (CMO), and measured at National Nano Device Laboratories (NDL). Since there are little research on this topic, we hope with the analysis of low frequency noise, we can learn more about the physical mechanism of α-IGZO.
Subjects
resistive random access memory
TFT
low frequency noise
1/f noise
Type
thesis
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