Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
Resource
Applied Physic Letters 84 (26): 5422-5424
Journal
Applied Physic Letters
Journal Volume
84
Journal Issue
26
Pages
5422-5424
Date Issued
2004
Date
2004
Author(s)
Cheng, Yung-Chen
Wu, Cheng-Ming
Chen, Meng-Kuo
Yang, C. C.
Feng, Zhe-Chuan
Li, Gang Alan
Rosenauer, Andreas
Ma, Kung-Je
Abstract
The nanostructures and optical properties of two InGaN/GaN quantum-well (QW) samples of different structures are compared. For improving the QW interface quality, InN interfacial layers of a few monolayers are added to the structure between barriers and wells in one of the samples. It was found that the addition of the InN interfacial layers improve the QW interface quality. The strain state analysis images show the high contrast between the diffusive QW boundaries and the clear QW interface in the sample with InN layers in the reference sample.
SDGs
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
03.pdf
Size
374.69 KB
Format
Adobe PDF
Checksum
(MD5):43ace63f7da7efb3930c340a48445e32