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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
Details
Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
Resource
Applied Physic Letters 84 (26): 5422-5424
Journal
Applied Physic Letters
Journal Volume
84
Journal Issue
26
Pages
5422-5424
Date Issued
2004
Date
2004
Author(s)
Cheng, Yung-Chen
Wu, Cheng-Ming
Chen, Meng-Kuo
Yang, C. C.
Feng, Zhe-Chuan
Li, Gang Alan
Yang, Jer-Ren
Rosenauer, Andreas
Ma, Kung-Je
DOI
10.1063/1.1767603
URI
http://ntur.lib.ntu.edu.tw//handle/246246/144167
https://www.scopus.com/inward/record.uri?eid=2-s2.0-3242672628&doi=10.1063%2f1.1767603&partnerID=40&md5=508821b4ace0740b9144dd315c31bce8
Type
journal article
File(s)
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Name
03.pdf
Size
374.69 KB
Format
Adobe PDF
Checksum
(MD5):43ace63f7da7efb3930c340a48445e32
