Study on the fabrication of ZnO thin film transistors
Date Issued
2012
Date
2012
Author(s)
Lee, Hai-Lin
Abstract
The effect of ZnO thin film transistors annealed in different ambiences is presented. In this research, solution-process ZnO thin film transistor has been demonstrated. Zinc oxide is an inorganic material. Therefore, the thin film transistor fabricated by ZnO can obtain higher mobility than that fabricated by organic material. There are many methods which can deposit ZnO thin film. Generally speaking, ZnO thin film deposited by RF sputtering can get higher quality, yet the flaws of sputtering are high cost and difficult to implement large area coating, so solution process ZnO is chosen to be channel material to cut down the cost.
First of all, the ZnO solution is synthesized. The zinc acetate dihydrate is dissolved in deionized water directly. Not only does cut down the cost, but also avoid employing some extremely hazardous solvent and stabilizer, such as 2-methoxyethanol and monoethanolamine to make whole process more eco-friendly. According to the result of TGA, the annealing temperatures are set at 300°C ~500°C. The properties of ZnO thin film under different annealing temperature as well as that under different annealing ambience would be discussed. Afterward, the ZnO thin film would be analyzed via SEM, XRD, four point probe, spectrum to comprehend more about ZnO thin film. In the end, the ZnO thin film transistor would be realized by photolithography. Annealing temperatures are in the range of 300 °C~500 °C, and annealing ambiences of both air and N2 are discussed. Threshold voltage form -0.84 V~2.4 V shows extremely low power consume. ZnO thin film transistors processed at 500 °C in air exhibits high performance, mobility of 7.7 cm2/Vs, and Ion/off ratio of 105. The ZnO thin films annealed in N2 with better crystallity and grain size are observed. In this research, high performace, low operating-voltage thin film transistors were demonstrated.
Subjects
Zinc oxide
Thin film transistor
Solution process
Thin film property
Electrical property
Type
thesis
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