Development of Bismuth Telluride Alloy Thin Film Thermoelectric Devices
Date Issued
2015
Date
2015
Author(s)
Liu, Chang-Yi
Abstract
In this thesis, we used magnetron sputtering deposition technique to deposit the thin film thermoelectric device that integrates Bi2.0Te2.7Se0.3 into Bi0.4Te3.0Sb1.6 thin film. At first, we discuss the different thickness effect on thermoelectric materials. When thickness of Bi2.0Te2.7Se0.3 and Bi0.4Te3.0Sb1.6 is 100nm, Seebeck coefficient is -24.61uV/K and 536.29uV/K respectively. When thickness of Bi2.0Te2.7Se0.3 and Bi0.4Te3.0Sb1.6 is 50nm, Seebeck coefficient is -30.03uV/K and 844.37uV/K respectively. As thermoelectric membrane thickness obviously change from 100nm to 50nm, Seebeck coefficient increases due to potential barrier scattering. Secondly, we use Bi2.0Te2.7Se0.3 and Bi0.4Te3.0Sb1.6 membrane to fabricate thin film thermoelectric device.
Subjects
thermoelectric device
Bismuth Telluride Alloy
seebeck coefficient
Type
thesis