The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme

Journal

Applied Physics Letters

Journal Volume

107

Journal Issue

9

Date Issued

2015

Author(s)

Liao, M.-H.

Huang, S.C.

DOI

10.1063/1.4930078

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/447955

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84940829725&doi=10.1063%2f1.4930078&partnerID=40&md5=2cbffa83a29d3dc4d00d2ea38a8b17b5

Type

journal article