Electroluminescence phenomena in InGaN/GaN multiple quantum well light-emitting diodes with electron tunneling layer
Resource
Japanese Journal of Applied Physics 47 (9): 7148-7151
Journal
Japanese Journal of Applied Physics
Journal Volume
47
Journal Issue
9 PART 1
Pages
7148-7151
Date Issued
2008
Author(s)
Nee, Tzer-En
Wang, Jen-Cheng
Chen, Hui-Yui
Chen, Wan-Yi
Cheng, Kung-Yu
Shen, Hui-Tang
Wu, Ya-Fen
Fan, Ping-Lin
Abstract
The phenomena of electroluminescence in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with an n-AlGaN layer and a superlattice of 10 periods of InGaN (10 Å)/GaN (15 Å) serving as the electron tunneling layer (ETL) have been investigated in detail over a broad temperature range from 20 to 300 K at various injection currents. Compared with conventional LEDs with a well-designed ETL, quantum efficiency and temperature insensitivity are found to be improved when an n-AlGaN layer is inserted. This is attributed to the localization effect of the n-AlGaN layer being stronger than that of the ETL layer, as analyzed using the Varshini formula and band-tail model. Nevertheless, the inserted ETL layer with the purpose of improving the carrier injection into the active layer not only increases the carrier recombination quantity, which leads to a marked increase in output light emission intensity, but also reduces the light emission intensity compared with sample with the n-AlGaN layer. Consequently, inserting a blocking layer between an active layer and a p-GaN layer may increase the output light emission intensity of the sample with an ETL.
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Type
journal article
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