Blue-shifted stimulated emission from ZnO films deposited on SiO2 by atomic layer deposition
Resource
Materials Chemistry and Physics, 135(1), 88-93
Journal
Materials Chemistry and Physics
Pages
88-93
Date Issued
2012
Date
2012
Author(s)
Abstract
ZnO films were prepared by atomic layer deposition upon a SiO 2 layer on a Si substrate and treated by rapid thermal annealing. The optically-pumped random lasing actions with low threshold values were observed in the ZnO films on SiO 2/Si substrates. With the decrease in ZnO film thickness or the increase in post-annealing duration, the stimulated emission shifted toward the shorter wavelength and the lasing threshold increased. The results can be attributed to the inter-diffusion between ZnO and SiO 2, which causes the modification of bandgap renormalization in ZnO. © 2012 Elsevier B.V. All rights reserved.
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journal article
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