Photoluminescence study of the self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy
Resource
Compound Semiconductors, 1997 IEEE International Symposium on
Journal
1997 IEEE International Symposium on Compound Semiconductors
Pages
-
Date Issued
1997-09
Date
1997-09
Author(s)
Chen, Ming-Chin
DOI
N/A
Abstract
Self-organized I d s quantum dots (QDs) grown on both (100) exact and (100) misoriented 7' toward (1 10) GaAs substrates using gas source molecular beam epitaxy (GSMBE) with V/III ratio ranging from 1.1 to 20 have been studied by photoluminescence (PL) measurements from 8.5 to 300 K. The QD structures grown on the misoriented substrates show a better uniformity than those grown on the exact substrates at the same growth conditions. Effects of ASH; flow rate on the PL intensity, peak energy and linewidth for QDs grown on both types of substrates are presented. Basically, higher ASH; flow rate gives higher PL intensity at 8.5 K. At room temperature( 300K), on the contrary, lower ASH; flow rate results in higher PL intensity. The study of thermal quenching energy reveals that the larger the dot size the better the PL intensity at 300K. © 1998 IEEE.
SDGs
Other Subjects
Gallium arsenide; III-V semiconductors; Indium arsenide; Molecular beam epitaxy; Molecular beams; Nanocrystals; Photoluminescence; Semiconductor quantum dots; Substrates; GaAs substrates; Growth conditions; InAs/GaAs quantum dots; Misoriented substrates; Photoluminescence measurements; PL intensity; Thermal quenching; V/III ratio; Gas source molecular beam epitaxy
Type
journal article
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