Band Alignment Type of the SiGe/Si Heterojunction Determined by Electro-Luminescence
Date Issued
2006
Date
2006
Author(s)
Peng, Chuan-Ming
DOI
zh-TW
Abstract
The advantage of the optical electronic component made up by silicon and germanium materials is that it could be fully compatible with the Si-based microelectronic chips. Therefore, the cost of the fabrication could decrease. In addition, the growth techniques for quantum heterojunction structures are in advanced and then the heterojunction structure of silicon or germanium has been studied far and wide recently.
In this study, the light-emitting diodes (LEDs) with multi-periods of Si/SiGe superlattice structures are used. The ten periods Si/SiGe superlattice structure are grown by UHV/CVD system and two materials of Si and Si0.9Ge0.1bulk materials which works as capping layer are grown in the P+ doped region. The two samples are called the Si0.9Ge0.1 capping and the Si capping respectively. The study starts by the measurements of the EL spectra and the LI curves. Then, the optical characteristics of the light emitting diode is got and discussed. This discussion is focused on the Si light emission from the buffer layer. Then, by the discussion, the band structure at the boundary between the Si buffer layer and the Si0.9Ge0.1 capping layer is discussed. Finally, a stable and reliable studying framework would be established.
Subjects
矽/矽鍺
異質接面
能帶結構
SiGe
band alignment
junction
Type
thesis
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