Study of Silicon Luminescence Efficiency using Silicon Nano-Structures
Date Issued
2004
Date
2004
Author(s)
Huang, Chao-Jei
DOI
zh-TW
Abstract
Silicon light source is the most urgent need device in the VLSI nowadays, and will play an important role not only on the science but on the technology for future. This thesis aim at the research of using silicon nanostructure to enhance the external quantum efficiency of silicon, we hope this device will become an applicable light source and can be integrated in the VLSI for future.
We proposed a new method for silicon light source by using MOS structure, and enhanced the ratio of radiative recombination by using silicon dioxide nanoparticles successfully. The external quantum efficiency of the MOS-LED can achieved to 1.5×10-4, and the near silicon laser phenomenon had been observed successfully.
In this thesis, we fabricate the silicon nanopillar on the silicon surface successfully, which include many detailed and important recipes like the nano-scale mask and the nano-scale etching...etc, and we believe those experiments will give huge contribution to the nano-electro-mechanical- systems(NEMS) for future.
Although we still not enhance the external quantum efficiency of the silicon material again up to now, we observe the phenomenon of reducing the silicon luminescence spectrum width by silicon nanostructure, this observation not only implicate the possibility of observing the Bose-Einstein Condensation phenomenon on silicon , but achieving the silicon laser for future.
Finally, we try to fabricate the nano-scale P-N junctions in silicon for silicon light source, we hope this method can enhance the external quantum efficiency of silicon material again by a large number of carriers can generate more carrier numbers of radiative combination. The first key point is to solve the problem of causing damages in the silicon lattices during the thermal treatment process because of the thermal stress. In this thesis, we find the relationship between the temperature difference and the number of defects in the silicon lattices roughly, and we also solve the problem of thermal stress during the thermal treatment process when the thermal treatment temperature below 800oC. If we can solve this problem completely, we will be able to enhance the external quantum efficiency of silicon material again for future, and give a huge contribution to the semiconductor fabrication technology.
Subjects
矽發光效率
Silicon Luminescence Efficiency
Type
thesis
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