In(Ga)As quantum ring terahertz photodetector with cutoff wavelength at 175 μm
Journal
IEEE Photonics Technology Letters
Journal Volume
21
Journal Issue
11
Pages
721-723
Date Issued
2009
Author(s)
Abstract
An InAs-GaAs quantum ring infrared photodetector has been fabricated successfully. The photodetector demonstrates a cutoff wavelength at 175 mum (1.7 THz) and the detectivity of 1.3times10 7 cm Hz 1/2 /W at 80 K. The precise control of the In(Ga)As ring height by capping GaAs layer thickness is responsible for extension of the detector response to terahertz range.
Type
journal article