Fabrication of Silicon and Germanium Nanostructures by Combination of Hydrogen Plasma Dry Etching and VLS Mechanism
Resource
Japanese Journal of Applied Physics 44 (7B): 5791-5794
Journal
Japanese Journal of Applied Physics
Journal Issue
44
Pages
5791-5794
Date Issued
2005
Date
2005
Author(s)
Abstract
Silicon and germanium nanostructures were fabricated by the combination of dry etching and vapor-liquid-solid (VLS) mechanism. Gold nanoparticles, about 20 nm in diameter, captured by self-assemble monolayer were adopted as the hard mask for dry etching and catalyst of germanium growth. Reactive ion etching in an inductive coupled plasma chemical vapor deposition (ICPCVD) system was used to fabricate various silicon nanostructures. Instead of CF4, SF 6, and SiCl4 gases, hydrogen plasma was used alone as the etching species to construct high-aspect-ratio silicon nanowires. Germanium nanostructures were then fabricated on the surface of silicon nanowires by dry etching and VLS mechanism. © 2005 The Japan Society of Applied Physics.
Subjects
Germanium nanostructure; Gold nanoparticle; Hydrogen plasma etching; ICPCVD; Silicon nanowire
Other Subjects
Catalysts; Dry etching; Germanium; Gold; Plasmas; Silicon; Germanium nanostructures; Gold nanoparticles; Hydrogen plasma etching; Silicon nanowires; Nanostructured materials
Type
journal article
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