Characterization of stacked hafnium oxide (HfO2) / silicon dioxide (SiO2) metal-oxide-semiconductor (MOS) tunneling temperature sensors
Journal
ECS Transactions
Journal Volume
25
Journal Issue
6
Pages
361-370
Date Issued
2009
Author(s)
Abstract
In this paper, the stacked HfO2/SiO2 MOS tunneling temperature sensors prepared by low temperature processing are investigated. The temperature responses of the stacked HfO2/SiO2 MOS tunneling temperature sensors at high and low temperature regions are not the same. The saturation current of the stacked HfO2/SiO2 MOS tunneling temperature sensor may affected by Frenkel-Poole effect at high temperature. It was also observed that the thicker stacked HfO2/SiO2 MOS tunneling temperature sensors are easier to be affected by Frenkel-Poole effect at high temperature. The stacked HfO2/SiO2 MOS tunneling temperature sensors can operate under low voltage and therefore consume less power as compared with the pure SiO2 tunneling temperature sensors.
Type
conference paper