Using Grey relational analysis to determine wet chemical etching parameters in through-silicon-via etching application
Journal
Materials Science in Semiconductor Processing
Journal Volume
16
Journal Issue
2
Pages
403-409
Date Issued
2013
Author(s)
Abstract
This paper presents a novel concept by adopting a wet chemical etching process to eliminate nanosecond laser-drilled through-silicon-via defects. An effective approach for the optimization of multiple performance characteristics of wet chemical etching to remove TSV defects based on Grey relational analysis is introduced. The orthogonal array with L9 was used for the experimental design. A Grey relational grade is obtained from the analysis to optimize multiple performance characteristics. Experimental results confirm the efficacy of this approach. © 2012 Elsevier Ltd.
Type
journal article