Crystallization behavior of r.f.-sputtered near stoichiometric Ni2MnGa thin films
Journal
Thin Solid Films
Journal Volume
408
Journal Issue
1-2
Pages
316-320
Date Issued
2002
Author(s)
Abstract
Thin films of Ni51.45Mn25.30Ga23.25 alloy were deposited onto a 3-inch diameter n-type Si(1 0 0) wafer by r.f. magnetron sputtering. The observation of high resolution transmission electron microscopy shows that the as-deposited thin films were partially crystalline and dense, with a preferred growth of L21 structure nanoparticles. The crystallization activation energy Q of the as-deposited free-standing thin film was found to be 234 kJ/mol by Kissinger's method. The onset crystallization temperature, Tx, was 427 °C at the 10 °C/min heating rate. Both Q and Tx are much lower than those of near-equiatomic TiNi alloy mainly due to its inherently partial crystallization in as-deposited films. © 2002 Elsevier Science B.V. All rights reserved.
SDGs
Type
journal article