InN-based heterojunction photodetector with extended infrared response
Journal
Optics Express
Journal Volume
23
Journal Issue
24
Pages
31150-31162
Date Issued
2015
Author(s)
Hsu L.-H
Kuo C.-T
Huang J.-K
Hsu S.-C
Lee H.-Y
Kuo H.-C
Lee P.-T
Tsai Y.-L
Hwang Y.-C
Su C.-F
He J.-H
Lin S.-Y
Cheng Y.-J
Abstract
The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination. © 2015 Optical Society of America.
SDGs
Other Subjects
Energy dispersive spectroscopy; Epitaxial layers; Gallium nitride; Heterojunctions; Optoelectronic devices; Photons; Quantum efficiency; Semiconductor quantum wells; X ray diffraction; Zinc oxide; Double heterojunctions; GaN epitaxial layers; Heterojunction photodetectors; Infrared response; Nonradiative process; Photocurrent response; Temperature dependent photoluminescences; Temperature optimization; Photodetectors
Type
journal article