Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures
Journal
Journal of Crystal Growth
Journal Volume
310
Journal Issue
10
Pages
2476-2479
Date Issued
2008
Author(s)
Abstract
In this work, a light-emitter with InGaN/GaN multiple quantum dot structures has been employed for a dual function device exhibiting the photodiode (PD) characteristics in reverse bias. The turn-on voltage in forward bias and the breakdown voltage in reverse bias were 3 and -13.5 V, respectively. Furthermore, with an incident wavelength of 350 nm and 3 V applied bias, the maximum responsivity of this device was 0.13 A/W. It was also found that the responsivity was nearly a constant from 390 to 440 nm. Thus, one can easily integrate PDs with LEDs using the same epistructure to realize a GaN-based optoelectronic integrated circuit. ? 2008 Elsevier B.V. All rights reserved.
Subjects
Electric breakdown
Light emitting diodes
Nanostructures
Nitrides
Semiconductor quantum dots
Incident wavelength
Optoelectronic integrated circuit
Photodiodes
SDGs
Type
journal article