Study of carrier dynamics and radiative efficiency in InGaN/GaN LEDs with Monte Carlo method
Journal
Physica Status Solidi (C) Current Topics in Solid State Physics
Journal Volume
8
Journal Issue
44750
Pages
2393-2395
Date Issued
2011
Author(s)
Abstract
In this paper, we have applied the Monte Carlo method to study carrier dynamics in InGaN quantum well. Vertical and lateral transport and its impact on device radiative efficiency is studied for different In compositions, dislocation densities, temperatures, and carrier densities. Our results show that the non-radiative recombination caused by the defect trapping plays a dominating role for higher indium composition and this limits the internal quantum efficiency (IQE). For lower indium composition cases, carrier leakage plays some role in the mid to high injection conditions and carrier leakage is strong in very high carrier density in all cases. Our results suggest that reducing the trap density and QCSE are still the key factors to improve the IQE. The paper examines the relative roles of leakage and non-radiative processes on IQE. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Subjects
Carrier dynamics; InGaN/GaN LEDs; Monte Carlo; Radiative efficiency
Other Subjects
Carrier dynamics; Carrier leakage; Dislocation densities; High injection; InGaN quantum wells; InGaN/GaN; Internal quantum efficiency; Key factors; Lateral transport; MONTE CARLO; Non-radiative recombinations; Nonradiative process; Radiative efficiency; Trap density; Carrier concentration; Efficiency; Indium; Monte Carlo methods; Semiconductor quantum wells; Quantum efficiency
Type
journal article