Study on the properties of GaAsSbN and the applications to Optoelectronic devices
Date Issued
2008
Date
2008
Author(s)
Chen, Chi-Kuang
Abstract
We have studied the effect of thermal annealing on the properties of GaAsSbN and the fabrication of GaAsSbN PIN devices. Passivation of Si and Be dopants in as-grown GaAsSbN was observed when the composition of nitrogen exceeded 1.7%. Although thermal annealing can improve the photoluminescence intensity and decrease the leakage current of the PIN junction, it results in high hole concentrations, leading to the conduction-type conversion in un-doped and Si-doped GaAsSbN. This phenomenon is ascribed to the generation of acceptor-type defects during the annealing process. After a comparative study on the device structures, we found that the N-on-P hetero-junction device has the best immunity to the type conversion effect resulting from the annealing process. Then, the effect of annealing temperature and duration on the device performance was systematically investigated. We found that annealing at 650
Subjects
dilute nitride
GaAsSbN
photodetector
solar cell
MBE
Type
thesis
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