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  4. Design of (ZrO2)x/(Cr2O3)y/(Al2O3)1-x-y superlattices for high transmittance APSM at 193 nm wavelength
 
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Design of (ZrO2)x/(Cr2O3)y/(Al2O3)1-x-y superlattices for high transmittance APSM at 193 nm wavelength

Resource
Microelectronic Engineering 61-62: 219-226
Journal
Microelectronic Engineering
Journal Volume
61-62
Pages
219-226
Date Issued
2002
Date
2002
Author(s)
Lai, F. D.
LON A. WANG  
DOI
10.1016/S0167-9317(02)00571-3
URI
http://ntur.lib.ntu.edu.tw//handle/246246/148187
https://www.scopus.com/inward/record.uri?eid=2-s2.0-17144457548&doi=10.1016%2fS0167-9317%2802%2900571-3&partnerID=40&md5=4ba714638994de4e79eb9f2201af845a
Abstract
A method for constructing a superlattice whose optical constant can be tuned over a wide range to meet the requirements of a HT-APSM blank is studied. (ZrO2)x/(Cr2O3)y/(Al2O3)1-x-y superlattices composed of 10 film stacks, which includes the stoichiometric ZrO2, Cr2O3 and Al2O3 layers in each stack, are obtained by using r.f. unbalanced magnetron sputtering in an atmosphere of argon and oxygen. One domain of thickness fraction of (ZrO2, Cr2O3) for the (ZrO2)x/(Cr2O3)y/(Al2O3)1-x-y superlattices with an optimized transmittance of 18% is found to be bounded by (0.09, 0.22) and (0.48, 0.32). © 2002 Published by Elsevier Science B.V.
Event(s)
Micro and Nano Engineering 2001
Subjects
Al2O 3; Cr2O3; Superlattice; ZrO2
Other Subjects
Attenuation; Light transmission; Magnetron sputtering; Masks; Phase shift; Stoichiometry; Attenuated phase shifting masks (APSM); Transmittance; Superlattices
Type
conference paper
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(MD5):8d091d637a2d40637e4a705ae0dab478

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