Reliability Improvement of Rapid Thermal Oxide Using Gas Switching
Resource
IEEE Transactions on Semiconductor Manufacturing 16 (4): 656-659
Journal
IEEE Transactions on Semiconductor Manufacturing
Journal Volume
16
Journal Issue
4
Pages
656-659
Date Issued
2003
Date
2003
Author(s)
Abstract
The instantaneous switch-off of the gas precursors during the ramp-down cycle in a spike ramp process is demonstrated to be an effective method to enhance the reliability of rapid thermal oxide. Due to the slow ramp-down rate (60/spl deg/C-90/spl deg/C/s) of a rapid thermal process, the oxidation during the slow ramp-down cycle may produce the inferior oxide, especially for ultrathin oxide. To avoid the oxidation in the slow ramp-down cycle, the oxidation precursor (oxygen) is switched off during the ramp-down cycle. The reliability of resulting oxide without oxidation during the ramp-down cycle is enhanced as compared with the conventional oxide, which is still oxidized during the ramp-down cycle.
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Type
journal article
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