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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Reliability Improvement of Rapid Thermal Oxide Using Gas Switching
Details
Reliability Improvement of Rapid Thermal Oxide Using Gas Switching
Resource
IEEE Transactions on Semiconductor Manufacturing 16 (4): 656-659
Journal
IEEE Transactions on Semiconductor Manufacturing
Journal Volume
16
Journal Issue
4
Pages
656-659
Date Issued
2003
Date
2003
Author(s)
Lee, Min Hung
Yu, Cheng-Ya
Yuan, Fon
Chen, K.-F.
Lai, Chang-Chi
Liu, Chee Wee
DOI
10.1109/TSM.2003.818982
URI
http://ntur.lib.ntu.edu.tw//handle/246246/148192
http://ntur.lib.ntu.edu.tw/bitstream/246246/148192/1/36.pdf
SDGs
[SDGs]SDG7
Type
journal article
File(s)
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Name
36.pdf
Size
176.86 KB
Format
Adobe PDF
Checksum
(MD5):933cc579d0f9b14722b23657492b82c4
