Light emission from Al/HfO2/silicon diodes
Resource
Journal of Applied Physics 95 (11): 6486
Journal
Journal of Applied Physics
Journal Volume
95
Journal Issue
11
Pages
6486-6488
Date Issued
2004
Date
2004
Author(s)
Abstract
The light emission from Al/HfO2-Si tunneling diodes were analyzed. The value of external quantum efficiency for light emission at room temperature from the metal-insulator-silicon light-emitting diode (MIS LED) was found to be 2.0×10-6, while 0.5×10-6 for the metal-oxide-silicon LED (MOS LED). It was observed that the light emission had an enhanced intensity of the band edge electron-hole plasma recombination. It was also observed that the SiO2 had a continuous current excitation, and thus the device temperature was higher than the HfO2 device, and also yielded a broad line shape at higher energy.
SDGs
Other Subjects
Current density; Electric field effects; Electroluminescence; Electron tunneling; Hafnium compounds; Light emission; Light emitting diodes; MOS devices; Permittivity; Phonons; Quantum efficiency; Semiconducting silicon; Thermooxidation; Transmission electron microscopy; Electron-hole plasma emission; Metal-insulator-silicon light-emitting diode (MIS LED); Radiative recombination; Rapid thermal oxidation (RTO); Tunnel diodes
Type
journal article
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