Micro-scale wrinkled diode operated at both forward and reversed bias
Date Issued
2014
Date
2014
Author(s)
Chen, Tsung-Pin
Abstract
As the semiconductor technology has been moving on and scaling down, from 90nm strained-Si, 45nm High K metal gate, to the newest 22nm FinFET transistors produced by Intel in 2011, meaning the scaling problem is taken from conventional scaling down to change the structure to follow Moore''s law. Thus the technology seems to reach the limit of physics. Some reports predict that Carbon nanotube, resonant tunneling device, single electron or spintronics will replace the conventional CMOS technology, here we present the lattice mismatch induced strain-relaxation to fabricate periodic wrinkles novel structure made of SiGe/Si to overcome the difficulty of the nowadays device fabrication. The strain would split the band edge leading to a great performance on devices.
The electrical property of P-N diode used in electronics application is affected by the potential barrier in the junction. Here we only use p-doped SiGe fabricating a diode-like characteristic from a wrinkled novel device operated at both forward and reversed bias. This bi-directional characteristic and deposited on Si wafer might be integrated in Si-based CMOS technology and rectifier elements applied in circuitry.
Subjects
皺褶型
應力釋放
矽鍺
二極體
互補式金氧半電晶體
Type
thesis
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