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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Compact Breakdown Model for PD SOI NMOS Devices Considering BJT/MOS Impact Ionization for SPICE Circuits Simulation
Details
Compact Breakdown Model for PD SOI NMOS Devices Considering BJT/MOS Impact Ionization for SPICE Circuits Simulation
Journal
IEDMS
Date Issued
2002-12
Author(s)
J. B. Kuo
S. C. Lin
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/299092
Type
conference paper